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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-126 package Complement to type 2N5190/5191/5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2N5193 2N5194 2N5195
Absolute maximum ratings(Ta=25ae )
SYMBOL PARAMETER CONDITIONS
VCBO
Collector-base voltage
CHA
2N5193 2N5194 Open emitter
VCEO
Collector-emitter voltage
VEBO IC ICM IB PD Tj Tstg
Emitter-base voltage Collector current
IN
NG S
2N5193 2N5194 2N5195
2N5195
Open base
CON EMI
TOR DUC
VALUE -40 -60 -80 -40 -60 -80 -5 -4 -7 -1
UNIT
V
V
Open collector
V A A A W ae ae
Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae
40 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2N5193 VCEO(SUS) Collector-emitter sustaining voltage 2N5194 2N5195 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5193 ICEO Collector cut-off current 2N5194 2N5195 IC=-1.5A ;IB=-0.15A IC=-4A ;IB=-1A IC=-1.5A ; VCE=-2V VCE=-40V; IB=0 VCE=-60V; IB=0 VCE=-80V; IB=0 VCB=-40V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 IC=-0.1A; IB=0 SYMBOL
2N5193 2N5194 2N5195
CONDITIONS
MIN -40 -60 -80
TYP.
MAX
UNIT
V
-0.6 -1.2 -1.2
V V V
-1.0
mA
ICBO
Collector cut-off current
ICEX IEBO

2N5193 2N5194
2N5195 2N5193 2N5194
Collector cut-off current
Emitter cut-off current
INC
NG S HA
2N5195 2N5193 2N5194 2N5195 2N5193
VCE=-40V; VBE(off)=-1.5V TC=125ae VCE=-60V; VBE(off)=-1.5V TC=125ae VCE=-80V; VBE(off)=-1.5V TC=125ae VEB=-5V; IC=0
CON EMI
TOR DUC
-0.1 -2.0 -0.1 -2.0 -0.1 -2.0 -1.0
-0.1
mA
mA
mA
25 hFE-1 DC current gain IC=-1.5A ; VCE=-2V 20
100
80
10 hFE-2 DC current gain 2N5194 2N5195 fT Transition frequency IC=-1A ; VCE=-10V;f=1MHz IC=-4A ; VCE=-2V 7 2 MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N5193 2N5194 2N5195
NG S HA
INC
CON EMI
TOR DUC
Fig.2 Outline dimensions
3


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